Stacked Trench Metal-Oxide-Semiconductor Field Effect Transistor Device

ABSTRACT

Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET  1203 . A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation-in-part of U.S. patent application Ser. No.11/023,327 filed Dec. 22, 2004, and U.S. patent application Ser. No.10/846,339 filed May 13, 2004.

FIELD OF THE INVENTION

Embodiments of the present invention relate to metal-oxide-semiconductorfield effect transistors (MOSFET), and more particularly to verticalMOSFET devices having a trench gate geometry.

BACKGROUND OF THE INVENTION

Referring to FIG. 1, a cross-sectional perspective view of a stripedtrench metal-oxide-semiconductor field effect transistor (TMOSFET) 100according to the conventional art is shown. The striped TMOSFET 100comprises a plurality of source contacts 110, a plurality of sourceregions 115, a plurality of gate regions 120, a plurality of gateinsulator regions 125, a plurality of body regions 130, a drain region135, 140 and drain contact 145. The drain region 135, 140 may optionallyinclude a first drain portion 140 and a second drain portion 135.

The body regions 130 are disposed above the drain region 135, 140. Thesource regions 115, gate regions 120 and the gate insulator regions 125are disposed within the body regions 130. The gate regions 120 and thegate insulator regions 125 are formed as parallel-elongated structures.The gate insulator region 125 surrounds the gate region 120. Thus, thegate regions 120 are electrically isolated from the surrounding regionsby the gate insulator regions 125. The gate regions 120 are coupled toform a common gate of the device 100. The source regions 115 are formedas parallel-elongated structures along the periphery of the gateinsulator regions 125. The source regions 115 are coupled to form acommon source of the device 100, by the source contacts 110. Althoughshown as a plurality of individual source contacts 110, it isappreciated that the source contacts 110 may be implemented as a singleconductive layer coupling all the source regions 115. The sourcecontacts 110 also couple the source regions 115 to the body regions 130.

The source regions 115 and the drain region 140 are heavily n-doped (N+)semiconductor, such as silicon doped with phosphorous or arsenic. Thebody regions 130 are p-doped (P) semiconductor, such as silicon dopedwith boron. The gate regions 120 are heavily n-doped (N+) semiconductor,such as polysilicon doped with phosphorous. The gate insulator regions125 may be an insulator, such as silicon dioxide.

When the potential of the gate regions 120, with respect to the sourceregions 115, is increased above the threshold voltage of the device 100,a conducting channel is induced in the body region 130 along theperiphery of the gate insulator regions 125. The striped TMSOFET 100will then conduct current between the drain region 140 and the sourceregions 115. Accordingly, the device 100 is in its on state.

When the potential of the gate regions 120 is reduced below thethreshold voltage, the channel is no longer induced. As a result, avoltage potential applied between the drain region 140 and the sourceregions 115 will not cause current to flow there between. Accordingly,the device 100 is in its off state and the junction formed by the bodyregion 130 and the drain region 140 supports the voltage applied acrossthe source and drain.

If the drain region 135, 140 comprises a second drain portion 135disposed above a first drain portion 140, the second portion of thedrain region 135 is lightly n-doped (N−) semiconductor, such as silicondoped with phosphorous or arsenic, and the first portion of the drainregion 140 is heavily n-doped (N+) semiconductor, such as silicon dopedwith phosphorous or arsenic. The lightly n-doped (N−) second portion ofthe drain region 135 results in a depletion region that extends intoboth the body regions 130 and the second portion of the drain region135, thereby reducing the punch through effect. Accordingly, the lightlyn-doped (N−) second portion of the drain region 135 acts to increase thebreakdown voltage of the striped TMOSFET 100.

The channel width of the striped TMOSFET 100 is a function of the lengthof the plurality of the source regions 115. Thus, the striped TMOSFET100 provides a large channel width to length ratio. Accordingly, thestriped TMOSFET may advantageously be utilized for power MOSFETapplications, such as switching elements in a pulse width modulation(PWM) voltage regulator.

Referring to FIG. 2, a cross-sectional perspective view of a closed celltrench metal-oxide-semiconductor field effect transistor (TMOSFET) 200according to the conventional art is shown. The closed cell TMOSFET 200comprises a plurality of source contacts 210, a plurality of sourceregions 215, a gate region 220, a gate insulator region 225, a pluralityof body regions 230, a drain region 235, 240 and a drain contact 245.The drain region 235, 240 may optionally include a first drain portion240 and a second drain portion 235.

The body regions 230, the source regions 215, the gate region 220 andthe gate insulator region 225 are disposed above the drain region 235,240. A first portion of the gate region 220 and the gate insulatorregion 225 is formed as substantially parallel-elongated structures 221.A second portion of the gate region 220 and the gate insulation region225 is formed as substantially normal-to-parallel elongated structures222. The first and second portions of the gate region 220 are allinterconnected and form a plurality of cells. The body regions 230 aredisposed within the plurality of cells formed by the gate region 220.

The gate insulator region 225 surrounds the gate region 220. Thus, thegate region 220 is electrically isolated from the surrounding regions bythe gate insulator region 225. The source regions 215 are formed in theplurality of cells, along the periphery of the gate insulator region225.

The source regions 215 are coupled to form a common source of the device200, by the source contacts 210. Although shown as a plurality ofindividual source contacts 210, it is appreciated that the sourcecontacts 210 may be implemented as a plurality of conductive strips eachcoupling a plurality of source regions 215, a single conductive layercoupling all the source regions 215, or the like. The source contacts210 also couple the source regions 215 to the body regions 230.

The source regions 215 and the drain region 240 are heavily n-doped (+N)semiconductor, such as silicon doped with phosphorous or arsenic. Thebody regions 230 are p-doped (P) semiconductor, such as silicon dopedwith boron. The gate region 220 is heavily n-doped semiconductor (N+),such as polysilicon doped with phosphorous. The gate insulator region225 may be an insulator, such as silicon dioxide.

When the potential of the gate region 220, with respect to the sourceregions 215, is increased above the threshold voltage of the device 200,a conducting channel is induced in the body region 230 along theperiphery of the gate insulator region 225. The device 200 will thenconduct current between the drain region 240 and the source regions 215.Accordingly, the device 200 is in its on state.

When the potential of the gate region 220 is reduced below the thresholdvoltage, the channel is no longer induced. As a result, a voltagepotential applied between the drain region 240 and the source regions215 will not cause current to flow there between. Accordingly, thedevice is in its off state and the junction formed by the body region230 and the drain region 240 supports the voltage applied across thesource and drain.

If the drain region 235, 240 comprises a second portion 235 disposedabove a first portion 240, the second portion of the drain region 235 islightly n-doped (N−) semiconductor, such as silicon doped withphosphorous or arsenic, and the first portion of the drain region 240 isheavily n-doped (N+) semiconductor, such as silicon doped withphosphorous. The lightly n-doped (N−) second portion of the drain region235 results in a depletion region that extends into both the bodyregions 230 and the second portion of the drain region 235, therebyreducing the punch through effect. Accordingly, the lightly n-doped (N−)second portion of the drain region 235 acts to increase the breakdownvoltage of the closed cell TMOSFET 200.

The channel width of the closed cell TMOSFET 200 is a function of thesum of the width of the source regions 215. Thus, the closed cellTMOSFET 200 geometry advantageously increases the width of the channelregion, as compared to the striped TMOSFET 100. Accordingly, the closedcell TMSOFET 200 has a relatively low channel resistance (e.g., onresistance), as compared to the striped TMOSFET 100 geometry. The lowchannel resistance reduces power dissipated in the closed cell TMOSFET200, as compared to the striped TMOSFET 100.

Similarly, the gate-to-drain capacitance of the closed cell TMOSFET 220is a function of the area of overlap between the bottom of the gateregion 220 and the drain region 240. Accordingly, the closed cellTMOSFET 200 geometry suffers from a higher gate-to-drain capacitance, ascompared to the striped TMOSFET 100. The relatively high gate to draincapacitance limits the switching speed of the closed cell TMOSFET 200,as compared to the striped TMOSFET 100.

SUMMARY OF THE INVENTION

Accordingly, embodiments of the present invention provide a trenchmetal-oxide-semiconductor field effect transistor (TMOSFET) device. TheTMOSFET device includes a drain-side-gate TMOSFET coupled to asource-side-gate TMOSFET. The drain-side-gate TMOSFET of the stackedTMOSFET device has its gate and drain regions on the same side while thesource region is oppositely disposed. A switching node metal layercouples the drain of the source-side-gate TMOSFET to the source of thedrain-side-gate TMOSFET so that the TMOSFETs are packaged as a stackedor lateral device.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example and not by way oflimitation, in the figures of the accompanying drawings and in whichlike reference numerals refer to similar elements and in which:

FIG. 1 shows a cross-sectional perspective view of a striped trenchmetal-oxide-semiconductor field effect transistor (TMOSFET) according tothe conventional art.

FIG. 2 shows a cross-sectional perspective view of a closed cell trenchmetal-oxide-semiconductor field effect transistor (TMOSFET) according tothe conventional art.

FIG. 3 shows a cross-sectional perspective view of a striped cell trenchmetal-oxide-semiconductor field effect transistor (TMOSFET), inaccordance with one embodiment of the present invention.

FIG. 4 shows a cross-sectional perspective view of another striped celltrench metal-oxide-semiconductor field effect transistor (TMOSFET), inaccordance with one embodiment of the present invention.

FIGS. 5A-5D show a flow diagram of a method of fabricating a stripedcell trench metal-oxide-semiconductor field effect transistor (TMOSFET),in accordance with one embodiment of the present invention.

FIGS. 6A-6O show a cross-sectional plane view of various phases offabricating a striped cell trench metal-oxide-semiconductor field effecttransistor (TMOSFET), in accordance with one embodiment of the presentinvention.

FIG. 7 shows a cross-sectional perspective view of a closed cell trenchmetal-oxide-semiconductor field effect transistor (TMOSFET), inaccordance with one embodiment of the present invention.

FIGS. 8A-8D show a flow diagram of a method of fabricating a closed celltrench metal-oxide-semiconductor field effect transistor (TMOSFET), inaccordance with one embodiment of the present invention.

FIGS. 9A-9O show a cross-sectional plane view of various phases offabricating a closed cell trench metal-oxide-semiconductor field effecttransistor (TMOSFET), in accordance with one embodiment of the presentinvention.

FIGS. 10A-10D show a flow diagram of a method of fabricating a closedcell trench metal-oxide-semiconductor field effect transistor (TMOSFET),in accordance with another embodiment of the present invention.

FIGS. 11A-11N show a cross-sectional plane view of various phases offabricating a closed cell trench metal-oxide-semiconductor field effecttransistor (TMOSFET), in accordance with another embodiment of thepresent invention.

FIG. 12 shows a cross-sectional perspective view of a device includingstacked trench metal-oxide-semiconductor field effect transistors(TMOSFET), in accordance with one embodiment of the present invention.

FIG. 13 shows a cross-sectional perspective view of a device includingstacked trench metal-oxide-semiconductor field effect transistors(TMOSFET), in accordance with another embodiment of the presentinvention.

FIG. 14 shows a cross-section perspective view of a device includinglateral connected metal-oxide-semiconductor field effect transistors(TMOSFET), in accordance with another embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

Reference will now be made in detail to the embodiments of theinvention, examples of which are illustrated in the accompanyingdrawings. While the invention will be described in conjunction withthese embodiments, it will be understood that they are not intended tolimit the invention to these embodiments. On the contrary, the inventionis intended to cover alternatives, modifications and equivalents, whichmay be included within the scope of the invention as defined by theappended claims. Furthermore, in the following detailed description ofthe present invention, numerous specific details are set forth in orderto provide a thorough understanding of the present invention. However,it is understood that the present invention may be practiced withoutthese specific details. In other instances, well-known methods,procedures, components, and circuits have not been described in detailas not to unnecessarily obscure aspects of the present invention.

Referring now to FIG. 3, a cross-sectional perspective view of a stripedcell trench metal-oxide-semiconductor field effect transistor (TMOSFET)300, in accordance with one embodiment of the present invention, isshown. The striped cell TMOSFET 300 comprises a source contact 310, asource region 315, a plurality of gate regions 320, a plurality of gateinsulator regions 325, a plurality of body regions 330, a plurality ofdrift regions 335, a plurality of drain regions 340 and a drain contact345. The striped cell TMOSFET 300 may further comprise a firstsource-body contact region 350, a second source-body contact region 355,and a source-body contact insulator region 360.

The plurality of gate regions 320, the plurality of gate insulatorregions 325, the plurality of body regions 330, the plurality of driftregions 335 and the plurality of drain regions 340 are disposed abovethe source region 315. The gate regions 320 and the gate insulatorregions 325 are formed as substantially parallel elongated structures.The body regions 330 are disposed above the source region 315 andbetween the parallel elongated structures formed by the gate regions 320and gate insulator regions 325. The drift regions 335 are disposed abovethe body regions 330 and between the parallel elongated structuresformed by the gate regions 320 and gate insulator regions 325. The drainregions 340 are disposed above the drift regions 335 and between theparallel elongated structures formed by the gate regions 320 and gateinsulator regions 325.

The gate regions 320 are surrounded by corresponding gate insulatorregions 325. Thus, the gate regions 320 are electrically isolated fromthe surrounding regions (e.g., source region 315, body regions 330,drift regions 335, drain regions 340 and drain contact 345) by the gateinsulator regions 325. Although not shown, the gate regions 320 areinterconnected to each other (e.g., in the periphery region of thedevice by a gate contact). The plurality of drain regions 340 arecoupled to form a common drain of the device by the drain contact 345.From the above description, it is appreciated that the present stripedTMOSFET 300 has its gate regions 320 and drain regions 340 substantiallyon the same side and is therefore referred to herein as adrain-side-gate TMOSFET.

In one implementation, the source region 315 and the drain regions 340may be heavily n-doped (N+) semiconductor, such as silicon doped withphosphorous or arsenic. The body regions 330 may be p-doped (P)semiconductor, such as silicon doped with boron. The drift regions maybe lightly n-doped (N−) semiconductor, such as silicon doped withphosphorous or arsenic. The gate regions 320 may be heavily n-doped (N+)or p-doped (P+) semiconductor, such as polysilicon doped withphosphorous or arsenic, or polysilicon doped with boron. The gateinsulator region 325 may be an oxide, such as silicon dioxide.

In another implementation, the source region 315 and the drain regions340 may be heavily p-doped (P+) semiconductor, such as silicon dopedwith boron. The body regions 330 may be lightly n-doped (N−)semiconductor, such as silicon doped with phosphorous or arsenic. Thedrift regions may be lightly p-doped (P−) semiconductor, such as silicondoped with boron. The gate regions 320 may be heavily n-doped (N+) orp-doped (P+) semiconductor, such as polysilicon doped with phosphorousor arsenic of polysilicon doped with boron. The gate insulator region325 may be an oxide, such as silicon dioxide.

The body regions 330 are electrically coupled to the source region 315.In one implementation, the body regions 330 are coupled to the sourceregion 315 by the first and second source-body contact regions 350, 355.The second source-body contact regions 355 may be a silicide, such astungsten silicide. The first source-body contact regions 350 may beheavily p-doped (P+) semiconductor, such as silicon doped with boron.The source-body contact regions 350, 355 are electrically isolated fromthe surrounding regions (e.g., drift regions 335) by the source-bodycontact insulator region 360. In one implementation, the source-bodycontact insulator region 360 may be an oxide, such as silicon dioxide orthe like. In another implementation, the source-body contact insulatorregion 360 may be p-doped polysilicon, silicon nitride or the like.

When the potential of the gate regions 320, with respect to the sourceregion 315, is increased above the threshold voltage of the device 300,a conducting channel is induced in the body regions 330 along theperiphery of the gate insulator regions 325. The device 300 will thenconduct current between the plurality of drain regions 340 and thesource region 315. Accordingly, the device 300 is in its on state. Whenthe potential of the plurality of gate regions 320 is reduced below thethreshold voltage, the channel is no longer induced. As a result, avoltage potential applied between the plurality of drain regions 340 andthe source region 315 will not cause current to be conducted therebetween. Accordingly, the device 300 is in its off state and thejunction of the body region 330 and the drift region 335 supports thevoltage applied across the source region 315 and the drain regions 340.

The width of the channel is a function of the sum of the lengths of thedrain regions 340. Hence, the width of the channel region issubstantially equal to the legacy striped cell TMOSFET 100. Therefore,the on resistance (Rds-on) of the device 300 is substantially equal tothe legacy striped cell TMOSFET 100.

In the legacy striped cell TMOSFET, a lead wire is utilized to connectthe source on the die to an external device. The source lead wireincreases the effective inductance of the source in the legacy strippedcell TMSOFET 100. The source of the present striped cell TMOSFET 300 maybe connected directly to a PCB or a legacy striped cell TMOSFET (e.g.,source contact covers the bottom of the die and may be wave soldered toa PCB or the like). The lead wire of the source may be eliminated, andtherefore the effective source inductance is reduced.

The present striped cell TMOSFET 300 may be fabricated such that thegate regions 320 do not overlap the drain regions 340. Therefore theseparation of the gate regions 320 and drain regions 340 is increased.Accordingly, the gate-to-drain capacitance (Cgd) may be substantiallyreduced as compared to the legacy striped cell TMOSFET 100. For example,in one implementation the gate regions substantially overlap the bodyregions and do not substantially overlap the drift regions or the drainregions.

In addition, the present striped cell TMOSFET 300 has a relatively largegate-to-source capacitance (Cgs) as a result of the overlap of the gateregions 320 with the source region 315. Therefore, the gate-to-sourcecapacitance (Cgs) of the present striped cell TMOSFET 300 is generallygreater than the gate-to-source capacitance (Cgs) of the legacy stripedcell TMOSFET 100. Hence, the ratio of the gate-to-drain capacitance(Cgd) to the source-to-drain capacitance (Cgs), a figure of merit, ofthe present stripe cell TMOSFET 300 is less (e.g., better figure ofmerit) than the legacy striped cell TMOSFET 100. It is also appreciatedthat the ratio of the gate-to-drain capacitance (Cgd) to gate-to-sourcecapacitance (Cgs) may be adjusted by adjusting the thickness of theportion of the gate oxide regions 325 proximate the source region 315and/or the portion of the gate insulator regions 325 proximate the drainregions 340.

Overlap between the gate regions 320 and the drift regions 335 cause anincrease in accumulation in the conduction channel during the on stateof the device 300. Hence, if the gate regions 320 extend to overlap thebody regions 330 and the drift regions 335, the on resistance (Rds-on)of the present striped cell TMOSFET 300 may be further reduced.

Referring now to FIG. 4, a cross-sectional perspective view of anotherstriped cell trench metal-oxide-semiconductor field effect transistor(TMOSFET) 400, in accordance with one embodiment of the presentinvention, is shown. The striped cell TMOSFET 400 is the same asdescribed with reference to FIG. 3, with the addition of a plurality ofsuper source regions 365. The super source regions 365 are formed assubstantially parallel elongated structures disposed above the gateregions 320. The gate insulator regions also surround the super sourceregions 365 and electrically isolate the super source regions 365 fromthe surrounding regions (e.g., gate regions 320, body regions 330, driftregions 335, drain regions 340 and drain contact 345).

Although not shown, the super source regions 365 are electricallycoupled to the source region 315 (e.g., by a contact in the peripheryregion). The super source regions 365 are adapted to decrease the onstate resistance (Rds-on) and to increase the breakdown voltage in theoff state.

The drain contact 345 is also shown substantially cutaway to reveal thestriped cell structure in greater detail. However, it is understood thatthe drain contact 345 overlays the surface of the core region of thepresent striped cell TMOSET 400.

Referring now to FIGS. 5A-5D, a flow diagram of a method of fabricatinga striped cell trench metal-oxide-semiconductor field effect transistor(TMOSFET), in accordance with one embodiment of the present invention,is shown. The method of fabricating the striped cell TMOSFET, inaccordance with one embodiment of the present invention, is illustratedin FIGS. 6A-6O. As depicted in FIGS. 5A and 6A, the process begins, at502, with various initial processes upon a substrate 502′, such ascleaning, depositing, doping, etching and/or the like. In oneimplementation, the substrate 502′ comprises silicon heavily doped withphosphorous (N+). It is appreciated that the semiconductor substrate502′ will substantially comprise a source region of the TMOSFET uponcompletion of the fabrication process.

At 504, a first semiconductor layer 504′ is epitaxial deposited upon thesubstrate 502′. In one implementation, the first semiconductor layer504′ comprises p-doped (P) silicon. The epitaxial deposited silicon maybe doped by introducing the desired impurity, such as boron, into theepitaxal reaction chamber. Alternatively, the doping of the firstsemiconductor layer 504′ may be achieved by a high-energy implantationwith a p-type dopant, such as boron.

At 506, a second semiconductor layer 506′ is epitaxial deposited uponthe first semiconductor layer 504′. In one implementation, the secondsemiconductor layer 506′ comprises lightly p-doped (P−) silicon. Theepitaxial deposited silicon may be doped by introducing the desiredimpurity, such as boron, into the reaction chamber. Alternatively, thedoping of the second semiconductor layer 506′ may be achieved by ahigh-energy implantation with a p-type dopant, such as boron.

At optional process 508, a sacrificial oxide layer 508′ is formed uponthe second semiconductor layer 506′. In one implementation, thesacrificial oxide 508′ is formed by oxidizing the surface of the secondsemiconductor layer 506′. At 510, a photo-resist is deposited andpatterned by any well-know lithography process to form a gate trenchresist layer 510′.

At 512, the exposed portions of the sacrificial oxide layer 508′, thesecond semiconductor layer 506′, the first semiconductor layer 504′ anda portion of the substrate 502′ are etched by any well-known anisotropicetching method (e.g., dry etch). In one implementation, an ionic etchantinteracts with the sacrificial oxide layer 508′, second semiconductorlayer 506′, first semiconductor layer 504′ and the substrate 502′exposed by the gate trench resist layer 510′. The etching processresults in a first plurality of trenches 512′ formed as substantiallyparallel structures.

At 514, the gate trench resist layer 510′ is removed utilizing anappropriate resist stripper or a resist ashing process. At 516, adielectric layer 516′ is formed on the walls of the first plurality oftrenches 512′. In one implementation, the dielectric layer 516′ isformed by oxidizing the exposed surface of the silicon to form a silicondioxide layer. The resulting dielectric layer 516′ along the trenchwalls forms a first portion of the gate insulator regions.

At 518, a polysilicon layer is deposited in the first plurality oftrenches 512′. In one implementation, the polysilicon is deposited inthe trenches 512′ by a method such as decomposition of silane (SiH₄).The polysilicon is doped with n-type impurity such as phosphorous orarsenic. The polysilicon may be doped by introducing the impurity duringthe deposition process. At 520, an etch-back process is performed toremove excess polysilicon material to form the gate regions 520′. Thepolysilicon layer is etched back such that the desiredseparation/overlap between the gate region formed from the polysiliconlayer in the trench and the subsequently formed body, drift and drainregions. In one implementation, the excess polysilicon is removed by acombination of a chemical mechanical polishing (CMP) process and ananisotropic etching method.

In an optional embodiment, a dielectric layer is formed over the gateregions 520′. In one implementation, the polysilicon of the gate regions512′ is oxidized to form a silicon dioxide layer. A second polysiliconlayer is deposited over the dielectric layer formed upon the gateregions 520′. Another etch back process is utilizes to form super sourceregions from the second polysilicon layer.

As depicted in FIGS. 5B and 6E, a dielectric layer is deposited in thefirst plurality of trenches 512′, at 522. In one implementation, thedielectric is deposited in the trenches by a method such asdecomposition of tetraethlorthosilicate (TEOS) or high density plasmafill (HDP). At 524, excess dielectric material is removed to completethe gate insulator regions 524′. In one implementation, the excessdielectric is removed by a chemical mechanical polishing (CMP) process.

At 526, the first semiconductor layer 504′ is p-doped to adjust thedoping concentration to form body regions 526′ between the firstplurality of trenches 512′. In one implementation, the doping processimplants a p-type impurity 527′, such as boron, in the firstsemiconductor layer 504′. At 528, a thermal cycle is utilized to drive(e.g., diffusion) the implanted impurity substantially through the depthof the first semiconductor layer 504′, thereby forming the body regions526′. At 530, the second semiconductor layer 506′ is n-doped. In oneimplementation, the doping process implants an n-type impurity 531′,such as phosphorous or arsenic, in the second semiconductor layer 506′.At 532, a second thermal cycle is utilized to drive (e.g., diffusion)the implanted impurity substantially through the depth of the secondsemiconductor layer 506′. At 534, the upper portion of the secondsemiconductor layer 506′ is heavily n-doped to form the drains 534′ inthe upper portion and the drift regions 530′ in the lower portion of thesecond semiconductor layer 506′ between the first plurality of trenches512′. In one implementation, the doping process implants an n-typeimpurity 533′, such as phosphorous or arsenic, in the upper portion ofthe second semiconductor layer 506′. At 536, a third thermal cycle maybe utilized to drive the third implant to achieve the desired depth ofthe drain regions 534′.

At optional process 538, a second sacrificial oxide layer 538′ is formedupon the wafer. In one implementation, the sacrificial oxide layer 538′is formed by oxidizing the surface of the wafer. At 542, a photo-resistis deposited and patterned by any well-know lithography process to forma source-body contact trench resist layer 542′.

As depicted in FIGS. 5C and 6J, the exposed portions of the secondsacrificial oxide layer 538′, the drain regions 534′ and the driftregions 530′ are etched by any well-known anisotropic etching method, at544. In one implementation, an ionic etchant interacts with sacrificialoxide layer 538′ the drain regions 534′ and the drift regions 530′exposed by the source-body contact trench resist layer 542′. The etchingprocess forms a second plurality of substantially parallel trenches544′. Each of the second plurality of trenches 544′ is disposed betweeneach of the first plurality of trenches 512′.

At 546, the exposed portion of the body regions 526′ are heavily p-dopedto form first source-body contacts 546′. In one implementation, thedoping process implants a p-type impurity 545′, such as boron, in thebody regions 526′. A thermal cycle may be utilized to drive thesource-body implant substantially throughout the exposed portions of thebody regions 526′. It is appreciated that a portion of the implant willdiffuse laterally into the adjacent un-exposed portion of the bodyregions 526′.

At 548, the source-body contact trench resist layer 542′ is removedutilizing an appropriate resist stripper or a resist ashing process. At550, a dielectric layer 550′ is formed on the walls of the secondplurality of trenches 544′. In one implementation, the dielectric layer550′ is formed by oxidizing the exposed surface of the silicon to form asilicon dioxide layer.

At 552, the dielectric formed at the bottom of the second plurality oftrenches 544′ and the exposed portions of the body regions 526′ areetched by any well-known anisotropic etching method. The etching processis performed until the second plurality of trenches 552′ extendpartially into the source region 502′ (e.g. substrate). The etchingprocess leaves the adjacent portions of the body regions 526′ and sourceregion 502′ exposed, while the drift regions 530′ and the drain regionsremain protected by the dielectric layer 550′ along the sidewalls. It isappreciated that the portions of the source-body contact implant thatdiffused laterally into the un-exposed portions of the body regions 526′substantially remains after the present etching process. The remainingportions of the source-body contact implant form first source-bodycontacts.

At 554, a first metal layer 554′ is deposited in the bottoms of thesecond plurality of trenches 552′ and reacted with the source region502′ and body regions 526′. In one implementation, titanium is sputteredand rapidly thermal annealed to form titanium silicide (TiSi) along theexposed portions of the source region 502′ and body regions 526′. Thetitanium silicide forms second source-body contacts 556′, which incombination with the first source-body contacts 546′, electricallycouples the body regions 526′ to the source region 502′. At 556, theun-reacted portions of metal along the dielectric lined walls of thesource-body trench are etched.

At 558, a second dielectric is deposited in the second plurality oftrenches 552′ to form source-body insulator regions 560′. In oneimplementation, the dielectric is deposited in the trenches 552′ by amethod such as decomposition of tetraethlorthosilicate (TEOS) or highdensity plasma fill (HDP).

At 564, a photo-resist is deposited and patterned by any well-knownlithography process to form a gate contact resist layer (not shown). Thegate contacts are formed in the periphery (not shown). At 566, theexposed portion of the gate insulators 524′ are etched by any well-knownanisotropic etching method (not shown). In one implementation, an ionicetchant interacts with the gate oxide exposed by the gate contact resistlayer. The gate contact openings extend down to the gates 520′. At 568,the gate contact resist layer is removed utilizing an appropriate resiststripper or a resist ashing process (not shown).

At 570, a photo-resist is deposited and patterned by any well-knownlithography process to form a drain contact resist layer (not shown). At572, the exposed portion of the third sacrificial oxide is etched by anywell-known anisotropic etching method (not shown). In oneimplementation, an ionic etchant interacts with the third sacrificialoxide and excess second dielectric material to form drain contactopenings. The drain contact openings extend down to the drain regions.At 574, the drain contact resist layer is removed utilizing anappropriate resist stripper or a resist ashing process.

At 576, a second metal layer is deposited on the wafer. In oneimplementation, the second metal layer, such as aluminum, is depositedby any well-known method such as sputtering. The second metal layercovers the tops of the drains 534′, the gate insulators 524′ and thesource-body contact insulators 560′. The second metal layer extends downinto the gate contact openings to make an electrical contact to thegates 520′ and down into the drain contact openings to make anelectrical contact to the drains. The second metal layer is thenpatterned utilizing a photo-resist mask and selective etching method toform a gate contact layer (not shown) and a drain contact layer 578′, at578.

At 584, fabrication continues with various backside processes to form asource contact. The various processes typically include etching,deposition, doping, cleaning, annealing, passivation, cleaving and/orthe like.

Referring now to FIG. 7, a cross-sectional perspective view of a closedcell trench metal-oxide-semiconductor field effect transistor (TMOSFET)700, in accordance with one embodiment of the present invention, isshown. The closed cell TMOSFET 700 comprises a source contact 710, asource region 715, a gate region 720, a gate insulator region 725, aplurality of body regions 730, a plurality of drift regions 735, aplurality of drain regions 740 and a drain contact 745. The closed cellTMOSFET 700 may further comprise a plurality of first source-bodycontact regions 750, a plurality of second source-body contact regions755, and a plurality of source-body contact insulator regions 760.

The gate region 720, the gate insulator region 725, the plurality ofbody regions 730, the plurality of drift regions 735 and the pluralityof drain regions 740 are disposed above the source region 715. A firstportion of the gate region 720 and the gate insulator region 725 areformed as substantially parallel elongated structures. A second portionof the gate region 620 and the gate insulator region 625 are formed assubstantially normal-to-parallel elongated structures (e.g., in thesurface plane of the wafer, the second portion of the gate region andgate insulator region comprise a plurality of substantially parallelelongated structures formed at right angles to the first portion of thegate region and gate insulator region). The first and second portions ofthe gate region 720 are all interconnected and form a plurality ofcells. The body regions 730 are disposed within the plurality of cellsand above the source region 715. The drift regions 735 are disposedwithin the plurality of cells and above the body regions 730. The drainregions 740 are disposed within the plurality of cells and above thedrift regions 735. The drain contact 745 is shown substantially cutawayto reveal the closed cell structure in greater detail. However, it is tobe understood that the drain contact 745 overlays the entire surface ofthe core region.

The gate region 720 is surrounded by the gate insulator region 725.Thus, the gate region 720 is electrically isolated from the surroundingregions (e.g., source region 715, body regions 730, drift regions 735,drain regions 740 and drain contact 745) by the gate insulator region725. The plurality of drain regions 740 are coupled to form a commondrain of the device by the drain contact 745. From the abovedescription, it is appreciated that the present closed cell TMOSFET 700has its gate and drain terminals on the same side.

In one implementation, the source region 715 and the drain regions 740may be heavily n-doped (N+) semiconductor, such as silicon doped withphosphorous or arsenic. The body regions 730 may be p-doped (P)semiconductor, such as silicon doped with boron. The drift regions 735may lightly n-doped (N−) semiconductor, such as silicon doped withphosphorous or arsenic. The gate region 720 may be heavily n-doped (N+)or p-doped (P+) semiconductor, such as polysilicon doped withphosphorous or arsenic, or polysilicon doped with boron. The gateinsulator region 725 may be an oxide, such as silicon dioxide.

In another implementation, the source region 715 and the drain regions740 may be heavily p-doped (P+) semiconductor, such as silicon dopedwith boron. The body regions 730 may be lightly n-doped (N−)semiconductor, such as silicon doped with phosphorous or arsenic. Thedrift regions 735 may lightly p-doped (P−) semiconductor, such assilicon doped with boron. The gate region 720 may be heavily p-doped(P+) or n-doped (N+) semiconductor, such as polysilicon doped withboron, or polysilicon doped with phosphorous or arsenic. The gateinsulator region 725 may be an oxide, such as silicon dioxide.

The body regions 730 are electrically coupled to the source region 715.In one implementation, the body regions 730 are coupled to the sourceregion 715 by the first and second source-body contact regions 750, 755.The second source-body contact regions 750 may be a silicide, such astungsten silicide. The first source-body contact regions 755 may beheavily p-doped (P+) semiconductor, such as silicon doped with boron.The source-body contact regions 750, 755 are electrically isolated fromthe surrounding drift regions 735 by the source-body contact insulatorregion 760. In one implementation, the source-body contact insulatorregion 760 may be an oxide, such as silicon dioxide. In anotherimplementation, the source-body contact insulator region 760 may bep-doped polysilicon, silicon nitride or the like. The source-bodycontact regions 750, 755 and source-body insulator regions 760 areformed substantially in the middle of each cell. The front corner of thecross-sectional view is cut away to show the structure of thesource-body contact regions 750, 755 and source-body insulator regions760 in greater detail.

When the potential of the gate region 720, with respect to the sourceregions 715, is increased above the threshold voltage of the device 700,a conducting channel is induced in the body region 730 along theperiphery of the gate insulator region 725. The device 700 will thenconduct current between the plurality of drain regions 740 and thesource region 715. Accordingly, the device 700 is in its on state. Whenthe potential of the plurality of gate regions 720 is reduced below thethreshold voltage, the channel is no longer induced. As a result, avoltage potential applied between the plurality of drain regions 740 andthe source region 715 will not cause current to be conducted therebetween. Accordingly, the device 700 is in its off state and thejunction of the body region 730 and the drift region 735 supports thevoltage applied across the source region 715 and the drain regions 740

The width of the channel is a function of the sum of the perimeter,adjacent the gate insulator region 725, of the drain regions 740. Hence,the width of the channel region is substantially equal to the legacyclosed cell TMOSFET 200. Therefore, the on resistance (Rds-on) of thedevice 700 is substantially equal to the legacy closed cell TMOSFET 200.

In the legacy closed cell TMOSFET 200, a lead wire is utilized toconnect the source on the die to an external device. The source wirelead increases the effective inductance of the source in the legacyclosed cell TMSOFET 200. The source of the present closed cell TMOSFET700 may be connected directly to a PCB or a legacy closed cell TMOSFET200 (e.g., source contact covers the bottom of the die and may be wavesoldered to a PCB or the like). The wire lead of the source may beeliminated, and therefore the effective source inductance of the presentclosed cell TMOSFET 700 is reduced.

The present closed cell TMOSFET 700 may be fabricated such that the gateregion 720 does not overlap the drain regions 740. Therefore, theseparation of the gate region 720 and drain regions 740 is increased.The increased separation reduces the gate-to-drain capacitance (Cgd).Accordingly, the gate-to-drain capacitance (Cgd) of the present closedcell TMOSFET 700 is reduced as compared to the legacy closed cellTMOSFET 200.

In addition, the present closed cell TMOSFET 700 has a relatively largegate-to-source capacitance (Cgs) as a result of the overlap of the gateregion 720 with the source region 715. Therefore, the gate-to-sourcecapacitance (Cgs) of the present closed cell TMOSFET 700 is generallygreater than the gate-to-source capacitance (Cgs) of the legacy closedcell TMOSFET 200. The ratio of the gate-to-drain capacitance (Cgd) tothe source-to-drain capacitance (Cgs), a figure of merit, of the presentclosed cell TMOSFET 700 is less (e.g., better figure of merit) than thelegacy closed cell TMOSFET 200. It is also appreciated that the ratio ofthe gate-to-drain capacitance (Cgd) to gate-to-source capacitance (Cgs)may be adjusted by adjusting the thickness of the portion of the gateinsulator region 725 proximate the source region 715 and/or the portionof the gate insulator region 725 proximate the drain regions 740.

Overlap between the gate region 725 and the drift regions 735 causes anincrease in accumulation in the conduction channel during the on stateof the device 700. Thus, if the gate region 720 extends to overlap thebody regions 730 and the drift regions 735, the on resistance (Rds-on)of the present closed cell TMOSFET 700 may be further reduced.

Although not shown, it is also appreciated that the closed cell TMOSFET700 may further include a super source region. The super source regionis formed as a substantially parallel elongated structure disposed abovethe gate region 720. The gate insulator region 725 also surrounds thesuper source region and electrically isolates the super source regionfrom the surrounding regions (e.g., gate region 720, body regions 730,drift regions 735, drain regions 740 and drain contact 745). The supersource region is electrically coupled to the source region 715 (e.g., bya contact in the periphery region). The super source region is adaptedto further decrease the on state resistance (Rds-on) and to increasesthe breakdown voltage in the off state of the closed cell TMOSFET 700.

Referring now to FIGS. 8A-8D, a flow diagram of a method of fabricatinga closed cell trench metal-oxide-semiconductor field effect transistor(TMOSFET), in accordance with one embodiment of the present invention,is shown. The method of fabricating the closed cell TMOSFET, inaccordance with one embodiment of the present invention, is illustratedin FIGS. 9A-9N. As depicted in FIGS. 8A and 9A, the process begins, at802, with various initial processes upon a substrate 802′, such ascleaning, depositing, doping, etching and/or the like. In oneimplementation, the substrate 802′ comprises silicon heavily doped withphosphorous (N+). The semiconductor substrate 802′ Will substantiallycomprise a source region of the TMOSFET upon completion of thefabrication processes.

At 804, a first semiconductor layer 804′ is epitaxial deposited upon thesubstrate 802′. In one implementation, the first semiconductor layer804′ comprises heavily p-doped (P+) silicon. The epitaxial depositedsilicon may be doped by introducing the desired impurity, such as boron,into the epitaxal reaction chamber. Alternatively, the doping of thefirst semiconductor layer may be achieved by a high energy implantationwith a p-type dopant, such as boron.

At 806, a second semiconductor layer 806′ is epitaxial deposited uponthe first semiconductor layer 804′. In one implementation, the secondsemiconductor layer 806′ comprises n-doped (N) silicon. The epitaxialdeposited silicon may be doped by introducing the desired impurity, suchas phosphorous or arsenic, into the reaction chamber. Alternatively, thedoping of the second semiconductor layer may be achieved by a highenergy implantation with an n-type dopant, such as phosphorous orarsenic.

At optional process 808, a first sacrificial oxide layer 808′ is formedupon the second semiconductor layer 806′. In one implementation, thesacrificial oxide layer 808′ is formed by oxidizing the surface of thesecond semiconductor layer 806′. At 810, a photo-resist is deposited andpatterned by any well-know lithography process to form a gate trenchresist layer 810′.

At 812, the exposed portions of the sacrificial oxide layer 808′, thesecond semiconductor layer 806′, the first semiconductor layer 804′ anda portion of the substrate 802′ are etched by any well-known anisotropicetching method (e.g., dry etch). In one implementation, an ionic etchantinteracts with the sacrificial oxide layer 808′, second semiconductorlayer 806′, first semiconductor layer 804′ and the substrate 802′exposed by the gate trench resist layer 810′. The etching processresults in plurality of trenches 812′ having a plurality of cellsdisposed therein. The plurality of trenches 812′ are formed having afirst portion of substantially parallel structures and a second portionof substantially normal-to-parallel structures.

At 814, the gate trench resist layer 810′ is removed utilizing anappropriate resist stripper or a resist ashing process. At 816, a firstdielectric 816′ is formed on the walls of the plurality of trenches812′. In one implementation, the first dielectric 816′ is formed byoxidizing the exposed surface of the silicon to form a silicon dioxidelayer. The resulting dielectric 816′ along the trench walls forms afirst portion of gate insulator regions.

At 818, a polysilicon layer 820′ is deposited in the first plurality oftrenches 812′. In one implementation, the polysilicon 820′ is depositedin the trenches 812′ by a method such as decomposition of silane (SiH₄).The polysilicon may be doped with n-type impurity such as phosphorous orarsenic. The polysilicon may be doped by introducing the impurity duringthe deposition process. At 820, an etch-back process is performed toremove excess polysilicon material to form gate regions. The polysiliconlayer is etched back such that the desired separation/overlap betweenthe gate region formed from the polysilicon layer in the trenches andthe subsequently formed body, drift and drain regions. In oneimplementation, the excess polysilicon is removed by a combination of achemical mechanical polishing (CMP) process and an anisotropic etchingmethod.

In an optional embodiment, a dielectric layer is formed over the gate.In one implementation, the polysilicon of the gate is oxidized to form asilicon dioxide. A second polysilicon layer is deposited over thedielectric layer formed upon the gate. Another etch back process isutilizes to form a super source from the second polysilicon layer.

As depicted in FIGS. 8B and 9E, a second dielectric 824′ is deposited inthe first plurality of trenches 812′, at 822. In one implementation, thedielectric is deposited in the trenches by a method such asdecomposition of tetraethlorthosilicate (TEOS) or high density plasmafill (HDP). At 824, excess dielectric material is removed to completethe gate insulator region. In one implementation, the excess dielectricis removed by a chemical mechanical polishing (CMP) process.

At 826, the first semiconductor layer 804′ is p-doped to adjust thedoping concentration of the body region 826′ between the plurality oftrenches 812′. In one implementation, the doping process implants ap-type impurity 827′, such as boron, in the first semiconductor layer804′. At 828, a thermal cycle is utilized to drive (e.g., diffusion) theimplanted impurity substantially through the depth of the firstsemiconductor layer 804′, thereby forming the body regions 826′. At 830,the second semiconductor layer 806′ is n-doped. In one implementation,the doping process implants an n-type impurity 831′, such as phosphorousor arsenic, in the second semiconductor layer 806′. At 832, a secondthermal cycle is utilized to drive (e.g., diffusion) the implantedimpurity substantially through the depth of the second semiconductorlayer 806′. At 834, the upper portion of the second semiconductor layer806′ is heavily n-doped to form drain regions 834′ in the upper portionand drift regions 830′ in the lower portion of the second semiconductorlayer 806′ between the plurality of trenches 812′. In oneimplementation, the doping process implants an n-type impurity 833′,such as phosphorous or arsenic, in the upper portion of the secondsemiconductor layer 806′. At 836, a third thermal cycle may be utilizedto drive the drain region implant to achieve the desired depth of thedrain regions 834′.

At 838, a second sacrificial oxide layer 838′ is formed upon the wafer.In one implementation, the second sacrificial oxide 838′ is formed byoxidizing the surface of the wafer. At 840, a photo-resist is depositedand patterned by any well-know lithography process to form a source-bodycontact opening resist layer 840′.

As depicted in FIGS. 8C and 9J, the exposed portions of the secondsacrificial oxide layer 838′, the source regions 834′ and the driftregions 830′ are etched by any well-known anisotropic etching method, at842. In one implementation, an ionic etchant interacts with sacrificialoxide layer 836′ the source regions 834′ and the drift regions 830′exposed by the source-body contact opening resist layer 840′. Theetching process forms a plurality of source-body contact opening 842′.Each of the source-body contact openings 842′ are disposed within thecells formed by the plurality of trenches 812′.

At 844, the exposed portion of the body regions 826′ are heavily dopedto form first source-body contact regions 844′. In one implementation,the doping process implants a p-type impurity 843′, such as boron, inthe body region 826′. A thermal cycle may be utilized to drive thesource-body implant substantially throughout the exposed portion of thebody regions 826′. It is appreciated that a portion of the implant willdiffuse laterally into the adjacent un-exposed portion of the bodyregions 826′.

At 846, the source-body contact opening resist layer 840′ is removedutilizing an appropriate resist stripper or a resist ashing process. At848, a dielectric 848′ is formed on the walls of the source-body contactopenings 842′. In one implementation, the dielectric 848′ is formed byoxidizing the exposed surface of the silicon to form a silicon dioxidelayer.

At 850, the portion of the dielectric 848′ formed at the bottom of thesource-body contact openings 842′ and the exposed portion of the bodyregions 826′ are etched by any well-known anisotropic etching method.The etching process is performed until the source-body contact openings850′ extend partially into the source region 802′ (e.g., substrate). Theetching process leaves the adjacent portions of the body regions 826′and source region 802′ exposed, while the drift regions 830′ and drainregions 834′ remain protected by the dielectric layer 848′. It isappreciated that the portions of the source-body contact implant 844′that diffused laterally into the un-exposed portion of the body regions826′ substantially remains after the present etching process. Theremaining portions of the source-body contact implant form firstsource-body contacts 844′.

At 852, a first metal 852′ is deposited in the bottom of the source-bodycontact openings 850′ and reacted with the exposed portions of the bodyregions 826′ and the source region 802′. In one implementation, titaniumis sputtered in the openings and rapidly thermal annealed to formtitanium silicide (TiSi). The titanium silicide forms second source-bodycontacts 854′, which in combination with the first source-body contactselectrically coupled the body regions 826′ to the source 802′. At 854,the un-reacted portion of the titanium along the dielectric lined wallsof the source-body contact openings 850′ is etched away.

At 856, a third dielectric layer is deposited in the source-body contactopenings 850′ to form a source-body insulator region 856′. In oneimplementation, the dielectric 856′ is deposited in the openings 850′ bya method such as decomposition of tetraethlorthosilicate (TEOS) or highdensity plasma fill (HDP).

At 862, a photo-resist is deposited and patterned by any well-knownlithography process to form a gate contact resist layer (not shown). Thegate contacts are formed in the periphery region. As depicted in FIG.8D, the exposed portion of the gate insulator region 822′ is etched byany well-known anisotropic etching method to form gate contacts in theperiphery region (not shown), at 864. In one implementation, an ionicetchant interacts with the gate oxide exposed by the gate contact resistlayer. The gate contact openings extend down to the gate regions 820′.At 866, the gate contact resist layer is removed utilizing anappropriate resist stripper or a resist ashing process.

At 868, a photo-resist is deposited and patterned by any well-knownlithography process to form a drain contact resist layer (not shown). At870, the exposed portion of the excess dielectric material and the thirdsacrificial oxide in the core is etched by any well-known anisotropicetching method to a form drain contact opening (not shown). In oneimplementation, an ionic etchant interacts with the excess dielectricmaterial and the third sacrificial oxide to form a drain contactopening. The drain contact opening extends down to the drain regions834′. At 872, the drain contact resist layer is removed utilizing anappropriate resist stripper or a resist ashing process (not shown).

At 874, a second metal layer is deposited on the wafer. In oneimplementation, the second metal layer, such as aluminum, is depositedby any well-known method, such as sputtering. The metal layer covers thetops of the drain regions 834′, the gate insulator regions 856′, thesource-body contact insulator regions 856′. The second metal layerextends down into the gate contact openings to make an electricalcontact to the gate regions and down into the drain contact openings tomake an electrical contact to the drain regions 834′. The second metallayer is then patterned utilizing a photo-resist mask and selectiveetching method to form a gate contact layer (not shown) and a draincontact layer 876′, at 876.

At 882, fabrication continues with various backside processes to form asource contact. The various processes typically include etching,deposition, doping, cleaning, annealing, passivation, cleaving and/orthe like.

Referring now to FIGS. 10A-10D, a flow diagram of a method offabricating a closed cell trench metal-oxide-semiconductor field effecttransistor (TMOSFET), in accordance with another embodiment of thepresent invention, is shown. The method of fabricating the closed cellTMOSFET, in accordance with another embodiment of the present invention,is illustrated in FIGS. 11A-110. As depicted in FIGS. 10A and 11A, theprocess begins, at 1002, with various initial processes upon a substrate1002′, such as cleaning, depositing, doping, etching and/or the like. Inone implementation, the substrate 1002′ comprises silicon heavily dopedwith phosphorous (N+). The semiconductor substrate 1002′ willsubstantially comprise a source region of the TMOSFET upon completion ofthe fabrication process.

At 1004, a first semiconductor layer 1004′ is epitaxial deposited uponthe substrate 1002′. In one implementation, the first semiconductorlayer 1004′ comprises heavily p-doped (P+) silicon. The epitaxialdeposited silicon may be doped by introducing the desired impurity, suchas boron, into the epitaxal reaction chamber. Alternatively, the dopingof first semiconductor layer 1004′ may be achieved by a high energyimplantation with a p-type dopant, such as boron.

At 1006, a second semiconductor layer 1006′ is epitaxial deposited uponthe first semiconductor layer 1004′. In one implementation, the secondsemiconductor layer comprises lightly n-doped (N−) silicon. Theepitaxial deposited silicon may be doped by introducing the desiredimpurity, such as phosphorous or arsenic, into the reaction chamber.Alternatively, the doping of second semiconductor layer 1006′ may beachieved by a high energy implantation with an n-type dopant, such asphosphorous or arsenic.

At 1008, a first sacrificial oxide layer 1008′ is formed upon the secondsemiconductor layer 1006′. In one implementation, the sacrificial oxidelayer 1008′ is formed by oxidizing the surface of the secondsemiconductor layer 1006′. At 1010, a photo-resist is deposited andpatterned by any-well know lithography process to form a gate trenchresist layer 1010′.

At 1012, the exposed portions of the first sacrificial oxide layer1008′, the second semiconductor layer 1006′, the first semiconductorlayer 1004′ and a portion of the substrate 1002′ are etched by anywell-known anisotropic etching method (e.g., dry etch). In oneimplementation, an ionic etchant interacts with the sacrificial oxidelayer 1008′, second semiconductor layer 1006′, first semiconductor layer1004′ and the substrate 1002′ exposed by the gate trench resist layer1010′. The plurality of trenches 1012′ are formed having a first portionof substantially parallel structures and a second portion ofsubstantially normal-to-parallel structures.

At 1014, the gate trench resist layer 1010′ is removed utilizing anappropriate resist stripper or a resist ashing process. At 1016, a firstdielectric layer 1016′ is formed on the walls of the plurality oftrenches 1012′. In one implementation, the dielectric layer 1016′ isformed by oxidizing the exposed surface of the silicon to form a silicondioxide layer. The resulting dielectric layer 1016′ along the trenchwalls forms a first portion of a gate insulator region.

At 1018, a first polysilicon layer is deposited in the plurality oftrenches. In one implementation, the polysilicon is deposited in thetrenches by a method such as decomposition of silane (SiH₄). Thepolysilicon may be doped with n-type impurity such as phosphorous orarsenic. The polysilicon may be doped by introducing the impurity duringthe deposition process. At 1020, an etch-back process is performed toremove excess polysilicon material to form the gate regions 1020′. Thepolysilicon layer is etched back such that the desiredseparation/overlap between the gate region formed from the polysiliconlayer in the trenches and the subsequently formed body, drift and drainregions. In one implementation, the excess polysilicon is removed by acombination of a chemical mechanical polishing (CMP) process and ananisotropic etching method.

Referring now to FIGS. 10B and 11E, a second dielectric layer 1022′ isformed over the gate regions 1020′, at optional process 1022. In oneimplementation, the polysilicon of the gate 1020′ is oxidized to formsilicon dioxide. At optional process 1024, a second polysilicon layer isdeposited over the dielectric layer 1022′ formed upon the gate 1020′. Atoptional process 1026, another etch back process is utilizes to formsuper source regions 1026′ from the second polysilicon layer.

At 1028, a third dielectric layer is deposited in the plurality oftrenches 1012′. In one implementation, the dielectric is depositedutilizing a sub-atmospheric chemical vapor deposition (SACVD) process.At 1030, excess dielectric material is removed to complete the gateinsulator region 1030′. In one implementation, the excess dielectricmaterial is removed by a chemical mechanical polishing (CMP) process.

At 1032, the lower portion of the second semiconductor layer 1004′ isdoped with a p-type impurity. In one implementation, the doping processimplants a p-type impurity 1032′, such as boron, in the lower portion ofthe second semiconductor layer 1006′. At optional process 1034, athermal cycle is utilized to drive (e.g., diffusion) the implantedimpurities, thereby forming the body regions 1035′. It is appreciatedthat the thermal cycle will cause the impurities in the firstsemiconductor layer 1004′ and the implanted impurities, from process1034, in the lower portion of the second semiconductor layer 1006′ todiffuse such that body regions 1035′ are formed substantially from thefirst semiconductor layer 1004′ and the lower portion of the secondsemiconductor layer 1006′.

At 1036, the upper portion of the second semiconductor layer 1006′ isn-doped to adjust the doping concentration of the drift region 1036′. Inone implementation, the doping process implants an n-type impurity1037′, such as phosphorous or arsenic, in the upper portion of thesecond semiconductor layer 1006′. At optional process 1038, a secondthermal cycle is utilized to drive (e.g., diffusion) the secondimplanted impurities, thereby forming the drift regions 1036′.

At 1042, a second sacrificial oxide layer 1042′ is formed upon thewafer. In one implementation, the sacrificial oxide layer is formed byoxidizing the surface of the wafer. As depicted in FIGS. 10C and 11H, aphoto-resist is deposited and patterned by any well-know lithographyprocess to form a source-body contact opening resist layer 1046′, at1046.

At 1048, the exposed portions of the second sacrificial oxide layer1042′ and drift regions 1036′ are etched by any well-known anisotropicetching method. In one implementation, an ionic etchant interacts withthe second sacrificial oxide layer 1042′ and the drift regions 1036′exposed by the source-body contact opening resist layer 1046′. Theetching process forms a plurality of source-body contact openings 1048′.Each of the source-body contact openings are disposed within the cellsformed by the plurality of trenches 1012′.

At 1050, the exposed portion of the body regions are heavily p-doped toform source-body implant regions 1050′. In one implementation, thedoping process implants a p-type impurity 1049′, such as boron, in thebody regions 1035′. A thermal cycle may be utilized to drive thesource-body implant 1050′ substantially throughout the exposed portionof the body regions 1035′. It is appreciated that a portion of thesource-body implant 1050′ will diffuse laterally into the adjacentun-exposed portions of the body regions 1035′.

At 1052, the source-body contact opening resist layer 1046′ is removedutilizing an appropriate resist stripper or a resist ashing process. At1054, a fourth dielectric layer 1054′ is formed on the walls of thesource-body contact openings 1048′. In one implementation, thedielectric layer 1054′ is formed by oxidizing the exposed surface of thesilicon to form a silicon dioxide layer.

At 1056, the portion of the dielectric layer 1054′ formed at the bottomof the source-body contact openings 1048′ and the exposed portion of thebody regions 1035′ are etched by any well-known anisotropic etchingmethod. The etching process is performed until the source-body contactopenings 1056′ extend partially into the substrate 1002′. The etchingprocess leaves the adjacent portions of the body regions 1035′ andsource region 1002′ exposed, while the drift regions 1036′ remainprotected by the dielectric layer 1054′. It is appreciated that theportions of the source-body contact implant that diffused laterally intothe un-exposed portion of the body regions 1035′ substantially remainsafter the present etching process. The remaining portions of thesource-body contact implant form first source-body contacts 1050′.

At 1058, a first metal layer 1060′ is deposited in the bottoms of thesource-body contact openings 1056′ and reacted with the exposed portionsof the body regions 1035′ and the substrate 1002′. In oneimplementation, titanium is sputtered in the openings and rapidlythermal annealed to form titanium silicide (TiSi). The titanium silicideforms second source-body contacts 1060′, which in combination with thefirst source-body contacts 1050′, electrically coupled the body regions1035′ to the substrate region 1002′. At 1060, the un-reacted portion ofthe titanium along the dielectric lined walls of the source-body contactopenings is etched away. At 1062, a fifth dielectric layer is depositedin the source-body contact openings to form a source-body insulatorregion 1064′. In one implementation, the dielectric layer is depositedin the source-body contact openings 1056′ utilizing a sub-atmosphericchemical vapor deposition (SACVD) process.

As depicted in FIG. 10D, a photo-resist is deposited and patterned byany well-known lithography process to form a gate contact resist layer(not shown), at 1068. The gate contacts are formed in the periphery (notshown). At 1070, the exposed portion of the fifth dielectric layer andthe gate insulator regions 1030′ are etched by any well-knownanisotropic etching method (not shown). In one implementation, an ionicetchant interacts with the gate oxide exposed by the gate contact resistlayer. The gate contact opening extends down to the gate regions 1020′.At 1072, the gate contact resist layer is removed utilizing anappropriate resist stripper or a resist ashing process (not shown).

At 1074, a photo-resist is deposited and patterned by any well-knownlithography process to form a drain contact resist layer (not shown). At1076, the exposed portion of the fifth dielectric layer is etched by anywell-known anisotropic etching method. In one implementation, an ionicetchant interacts with the fifth dielectric layer to form drain contactopenings. The drain contact openings extend down to the drift regions1036′. At 1078, the upper portion of the drift region is heavily n-dopedto form drain regions. At optional process 1080, a third thermal cycleis utilized to drive (e.g., diffusion) the implanted impurity to achievethe desired depth of the drain regions 1080′. At 1082, the drain contactresist layer is removed utilizing an appropriate resist stripper or aresist ashing process.

At 1084, a second metal layer is deposited on the wafer. In oneimplementation, the second metal layer, such as aluminum, is depositedby any well-known method such as sputtering. The metal layer covers thetops of the drain, the gate oxide and the source-body contact oxideregions and makes electrical contact with the drain regions. The secondmetal layer also extends down into the gate contact opening to make anelectrical contact to the gate region. The metal layer is then patternedutilizing a photo-resist mask and selective etching method to form agate contact layer (not shown) and a drain contact layer 1086′, at 1086.

At 1088, fabrication continues with various backside processes to form asource contact. The various processes typically include etching,deposition, doping, cleaning, annealing, passivation, cleaving and/orthe like.

Referring now to FIG. 12, a cross-sectional perspective view of astacked trench metal-oxide-semiconductor field effect transistor(TMOSFET) device 1200, in accordance with one embodiment of the presentinvention, is shown. The stacked TMOSFET device 1200 includes adrain-side-gate TMOSFET 1202 coupled to a source-side-gate TMOSFET 1203.The stacked TMOSFET device 1200 may also be described as including ahigh-side drain 1205, 1210 a high-side gate 1215, a high-side source1220, a switch node 1225, a low-side source 1230, a low-side gate 1235and a low-side drain 1240, 1245.

The drain-side-gate TMOSFET 1202 includes a drain contact 1250, aplurality of drain regions 1205, 1210, a plurality of gate regions 1215,a plurality of gate insulator regions 1255, a plurality of body regions1260, and a source region 1220. The drain-side-gate TMOSFET 1202 alsoincludes a first source-body contact region 1265, a second source-bodycontact region 1270, and a source-body contact insulator region 1275.The drain region 1205, 1210 may optionally include a first drain portion1205 and a second drain portion 1210, wherein the second drain region istypically referred to as a drift region.

The plurality of gate regions 1215, the plurality of gate insulatorregions 1255, the plurality of body regions 1260, the plurality of driftregions 1210 and the plurality of drain regions 1205, 1210 are disposedabove the source region 1220. In one implementation, the gate regions1215 and the gate insulator regions 1255 are formed as substantiallyparallel elongated structures. The body regions 1260 are disposed abovethe source region 1220 and between the parallel elongated structuresformed by the gate regions 1215 and gate insulator regions 1255. Thedrift regions 1210 are disposed above the body regions 1260 and betweenthe parallel elongated structures formed by the gate regions 1215 andgate insulator regions 1255. The drain regions 1205 are disposed abovethe drift regions 1210 and between the parallel elongated structuresformed by the gate regions 1215 and gate insulator regions 1255. Thegate regions 1215 are surrounded by corresponding gate insulator regions1255. Thus, the gate regions 1215 are electrically isolated from thesurrounding regions (e.g., source region 1220, body regions 1260, driftregions 1210, and drain regions 1205) by the gate insulator regions1255. Although not shown, the gate regions 1215 are interconnected toeach other in the periphery region of the device by a second gatecontact.

In another implementation, a first portion of the gate region and thegate insulator region are formed as substantially parallel elongatedstructures. A second portion of the gate region and the gate insulatorregion are formed as substantially normal-to-parallel elongatedstructures (e.g., in the surface plane of the wafer, the second portionof the gate region and gate insulator region comprise a plurality ofsubstantially parallel elongated structures formed at right angles tothe first portion of the gate region and gate insulator region). Thefirst and second portions of the gate region are all interconnected andform a plurality of cells as illustrated in FIG. 7. The body regions aredisposed within the plurality of cells and above the source region. Thedrift regions are disposed within the plurality of cells and above thebody regions. The drain regions are disposed within the plurality ofcells and above the drift regions.

In one implementation, the source region 1220 and the drain regions 1205may be heavily n-doped (N+) semiconductor, such as silicon doped withphosphorous or arsenic. The body regions 1260 may be p-doped (P)semiconductor, such as silicon doped with boron. The drift regions 1210may be lightly n-doped (N−) semiconductor, such as silicon doped withphosphorous or arsenic. The gate regions 1215 may be heavily n-doped(N+), such as polysilicon doped with phosphorous or arsenic. The gateinsulator region 1255 may be an oxide, such as silicon dioxide.

The body regions 1260 are electrically coupled to the source region1220. In one implementation, the body regions 1260 are coupled to thesource region 1220 by the first and second source-body contact regions1265, 1270. The second source-body contact regions 1270 may be asilicide, such as tungsten silicide. The first source-body contactregions 1265 may be heavily p-doped (P+) semiconductor, such as silicondoped with boron. The source-body contact regions 1265, 1270 areelectrically isolated from the surrounding regions (e.g., drift regions1210) by the source-body contact insulator region 1275. In oneimplementation, the source-body contact insulator region 1275 may be anoxide, such as silicon dioxide or the like. In another implementation,the source-body contact insulator region 1275 may be p-dopedpolysilicon, silicon nitride or the like.

The source-side-gate TMOSFET 1203 includes a plurality of source regions1230, a plurality of body regions 1280, a plurality of gate insulatorregions 1285, a plurality of gate regions 1235, a drain region 1240,1245, and a drain contact 1290. The drain region 1240, 1245 mayoptionally include a first drain portion 1245 and a second drain portion1240, wherein the second drain region is typically referred to as adrift region.

The body regions 1280 are disposed above the drain region 1240, 1245.The source region 1230, gate regions 1235 and the gate insulator regions1285 are disposed within the body regions 1280. In one implementation,the gate regions 1235 and the gate insulator regions 1285 are formed asparallel-elongated structures. In another implementation, a firstportion of the gate region and the gate insulator region is formed assubstantially parallel-elongated structures and a second portion isformed as substantially normal-to-parallel elongated structures asillustrated in FIG. 2. The gate insulator region 1285 surrounds the gateregion 1235. Thus, the gate regions 1235 are electrically isolated fromthe surrounding regions by the gate insulator regions 1285. Although notshown, the gate regions 1235 are interconnected to each other in theperiphery region of the device by a first gate contact. In oneimplementation, the source regions 1230 are formed as parallel-elongatedstructures along the periphery of the gate insulator regions 1285. Inanother implementation, the source regions are disposed in the pluralityof cells, formed within the first and second portions of the gateregion, along the periphery of the gate insulator region as illustratedin FIG. 2.

The source regions 1230 and the drain region 1240, 1245 may be heavilyn-doped (N+) semiconductor, such as silicon doped with phosphorous orarsenic. The body regions 1280 may be p-doped (P) semiconductor, such assilicon doped with boron. The gate regions 1235 may be heavily n-doped(N+) semiconductor, such as polysilicon doped with phosphorous orarsenic. The gate insulator regions 1290 may be an insulator, such assilicon dioxide. The drift region 1240 may be lightly n-doped (N−)semiconductor, such as silicon doped with phosphorous or arsenic.

A metal layer forming the switching node 1225 couples the source 1220 ofthe drain-side-gate TMOSFET 1202 and the source of the source-side-gateTMOSFET 1203 together. The metal layer 1225 also couples the sourceregions 1230 to the body regions 1280 of the source-side-gate TMOSFET1203.

The source-side-gate TMOSFET 1203 may be fabricated in accordance withany method of fabricating a conventional TMOSFET. The drain-side-gateTMOSFET 1202 may be fabricated in accordance with the methods offabricating as described above with reference to FIGS. 5A-5D, 6A-6O,8A-8D, 9A-9O, 10A-10D, and 11A-11N. In one implementation, thesource-side-gate TMOSFET 1203 and drain-side TMOSFET 1202 may then becoupled together by re-flowing the source/body contact metal layer ofthe source-side-gate TMOSFET 1203 and/or the drain contact metal layerof the drain-side-gate TMOSFET 1202, to form the switching node 1225.

The stacked TMOSFT device 1200 advantageously reduces the devicefootprint by approximately one-half, compared to conventional TMOSFETcircuits used in drive stages for example. The packaging configurationof the stacked TMOSFET device 1200 also advantageously reducesinterconnect inductance, as compared to conventional TMOSFET circuitsused in drive stages for example.

Referring now to FIG. 13, a cross-sectional perspective view of a deviceincluding stacked trench metal-oxide-semiconductor field effecttransistors (TMOSFET) 1300, in accordance with another embodiment of thepresent invention, is shown. The stacked TMOSFET device 1300 includes adrain-side-gate TMOSFET 1202 coupled to a source-side-gate TMOSFET 1203.The stacked TMOSFET device 1300 may also be described as including ahigh-side drain 1205, 1210 a high-side gate 1215, a high-side source1220, a switch node 1225, a low-side drain 1240, 1245, a low-side gate1235 and a low-side source 1230.

The structure of the drain-side-gate TMOSFET 1202 and thesource-side-gate TMOSFET 1203 is described in greater detail withreference to FIG. 12. The source-side-gate TMOSFET 1203 may befabricated in accordance with any method of fabricating a conventionalTMOSFET. The drain-side-gate TMOSFET 1202 may be fabricated inaccordance with any method of fabrication as described above withreference to FIGS. 5A-5D, 6A-6O, 8A-8D, 9A-9O, 10A-10D and 11A-11N.

The stacked TMOSFET 1300 includes a switch node lead 1295 coupled to thesource 1220 of the drain-side-gate TMOSFET 1202 and the drain 1245, 1240of the source-side-gate TMOSFET 1203. The switch node lead 1295 may becoupled to the source 1220 of the drain-side-gate TMOSFET 1202 and thedrain 1245, 1240 of the source-side-gate TMOSFET 1202 by re-flowing thesource contact 1292 of the drain-side-gate TMOSFET 1202 and the draincontact 1290 of the source-side-gate TMOSFET 1203.

The stacked TMOSFT device 1300 may, for example, be used in theswitching stage of switching mode regulators. In such cases, the drain1205 of the drain-side-gate TMOSFET 1202 may be the high-side switchingterminal, the source 1230 of the source-side-gate TMOSFET 1203 may bethe low-side switching terminal, the gate 1215 of the drain-side-gateTMOSFET 1202 may be the high-side control terminal, and the gate 1235 ofthe source-side-gate TMOSFET 1203 may be the low-side control terminal.The stacked TMOSFT device 1300 advantageously reduces the devicefootprint by approximately one-half, compared to conventional TMOSFETcircuits used in the switching stage of switching mode regulators forexample. The packaging configuration of the stacked TMOSFET device 1300also advantageously reduces interconnect inductance, as compared toconventional TMOSFET circuits used in the switching stage of switchingmode regulators for example.

Referring now to FIG. 14, a cross-section perspective view of a device1400 including lateral connected metal-oxide-semiconductor field effecttransistors (TMOSFET), in accordance with another embodiment of thepresent invention, is shown. The lateral TMOSFET device 1400 includes adrain-side-gate TMOSFET coupled to a source-side-gate TMOSFET. Thelateral TMOSFET device 1400 may also be described as including ahigh-side drain 1205, 1210 a high-side gate 1215, a high-side source1220, a switch node 1225, a low-side drain 1240, 1245, a low-side gate1235 and a low-side source 1230.

The structure of the drain-side-gate TMOSFET and the source-side-gateTMOSFET is described in greater detail with reference to FIG. 12. Thesource-side-gate TMOSFET may be fabricated in accordance with any methodof fabricating a conventional TMOSFET. The drain-side-gate TMOSFET maybe fabricated in accordance with any method of fabrication as describedabove with reference to FIGS. 5A-5D, 6A-6O, 8A-8D, 9A-9O, 10A-10D and11A-11N.

The lateral TMOSFET 1400 includes a switch node lead (e.g., lead frame)1295 coupled to the source 1220 of the drain-side-gate TMOSFET and thedrain 1245, 1240 of the source-side-gate TMOSFET. The switch node lead1295 may be coupled to the source 1220 of the drain-side-gate TMOSFETand the drain 1245, 1240 of the source-side-gate TMOSFET by re-flowingthe source contact 1292 of the drain-side-gate TMOSFET and the draincontact 1290 of the source-side-gate TMOSFET when the devices are incontact with the switch node lead 1295.

The lateral TMOSFT device 1400 may, for example, be used in theswitching stage of switching mode regulators. In such cases, the drain1205 of the drain-side-gate TMOSFET may be the high-side switchingterminal, the source 1230 of the source-side-gate TMOSFET may be thelow-side switching terminal, the gate 1215 of the drain-side-gateTMOSFET may be the high-side control terminal, and the gate 1235 of thesource-side-gate TMOSFET may be the low-side control terminal.

The foregoing descriptions of specific embodiments of the presentinvention have been presented for purposes of illustration anddescription. They are not intended to be exhaustive or to limit theinvention to the precise forms disclosed, and obviously manymodifications and variations are possible in light of the aboveteaching. The embodiments were chosen and described in order to bestexplain the principles of the invention and its practical application,to thereby enable others skilled in the art to best utilize theinvention and various embodiments with various modifications as aresuited to the particular use contemplated. It is intended that the scopeof the invention be defined by the Claims appended hereto and theirequivalents.

1. An integrated circuit comprising: a drain-side-gate trenchmetal-oxide-semiconductor field effect transistor; a source-side-gatetrench metal-oxide-semiconductor field effect transistor; and a metallead coupling a drain of said source-side-gate trenchmetal-oxide-semiconductor field effect transistor to a source of saiddrain-side-gate trench metal-oxide-semiconductor field effecttransistor.
 2. The integrated circuit of claim 1, wherein saiddrain-side-gate trench metal-oxide-semiconductor field effect transistorcomprises: a source region; a plurality of gate regions disposed abovesaid source region, wherein said plurality of gate regions are formed assubstantially parallel elongated structure; a plurality of gateinsulator regions, wherein each of said plurality of gate insulatorregions are disposed about a periphery of a respective one of saidplurality of gate regions; a plurality of body regions disposed abovesaid source region and between said plurality of gate insulator regions;a plurality of drift regions disposed above said plurality of bodyregions and between said plurality of gate insulator regions; and aplurality of drain regions disposed above said plurality of driftregions and between said plurality of gate insulator regions.
 3. Theintegrated circuit of claim 2, wherein: said source region comprises aheavily n-doped semiconductor; said plurality of body regions comprise ap-doped semiconductor; said plurality of drift regions comprise alightly n-doped semiconductor; said plurality of drain regions comprisea heavily n-doped semiconductor; said plurality of gate insulatorregions comprise an oxide; and said plurality of gate regions comprise aheavily n-doped semiconductor.
 4. The integrated circuit of claim 2,wherein said drain-side-gate trench metal-oxide-semiconductor fieldeffect transistor further comprises: a plurality of first source-bodycontacts electrically coupled to said plurality of body regions; aplurality of second source-body contacts electrically coupled betweensaid plurality of first source-body contacts and said source region; anda source-body contact insulator region for electrically isolating saidfirst source-body contact and said second source-body contact from oneor more of said plurality of drift regions and said plurality of drainregions.
 5. The integrated circuit of claim 4, wherein: said pluralityof first source-body contacts comprise a heavily p-doped semiconductor;and said plurality of second source-body contacts comprise a silicide.6. The integrated circuit of claim 1, wherein said drain-side-gatetrench metal-oxide-semiconductor field effect transistor comprises: asource region; a gate region disposed above said source region, whereina first portion of said plurality of gate regions are formed assubstantially parallel elongated structures and a second portion of saidplurality of gate regions are formed as substantially normal-to-parallelelongated structures; a gate insulator region, wherein said gateinsulator region is disposed about a periphery of said gate region; aplurality of body regions disposed above said source region and betweensaid gate insulator region; a plurality of drift regions disposed abovesaid plurality of body regions and between said gate insulator region;and a plurality of drain regions disposed above said plurality of driftregions and between said gate insulator regions
 7. The integratedcircuit of claim 6, wherein: said source region comprises an heavilyn-doped semiconductor; said plurality of body regions comprise a p-dopedsemiconductor; said plurality of drift regions comprise a lightlyn-doped semiconductor; said plurality of drain regions comprise aheavily n-doped semiconductor; said gate insulator region comprises anoxide; and said gate region comprises a heavily n-doped semiconductor.8. The integrated circuit of claim 6, wherein said drain-side-gatetrench metal-oxide-semiconductor field effect transistor furthercomprises: a plurality of first source-body contacts electricallycoupled to said plurality of body regions; a plurality of secondsource-body contacts electrically coupled between said plurality offirst source-body contacts and said source region; and a plurality ofsource-body contact insulator regions for electrically isolating saidplurality of first source-body contacts and said plurality of secondsource-body contacts from one or more of said plurality of drift regionsand said plurality of drain regions.
 9. The integrated circuit of claim8, wherein: said plurality of first source-body contacts comprise aheavily p-doped semiconductor; and said plurality of second source-bodycontacts comprise a silicide.
 10. A stacked trenchmetal-oxide-semiconductor field effect transistor device comprising: afirst drain; a first gate disposed below said first drain; a first gateinsulator is disposed about a periphery of said first gate; a first bodydisposed below said first drain and between said first gate insulator; afirst source disposed between said first body and said first gateinsulator, wherein said first source is separated from said first drainby said first body; a switching node layer disposed above said firstdrain; a second source disposed above said switching node; a second gatedisposed above said second source; a second gate insulator is disposedabout a periphery of said second gate; a second body disposed above saidsecond source and between said second gate insulator; a second driftdisposed above said second body and between said second gate insulator;and a second drain disposed above said second drift and between saidsecond gate insulator.
 11. The stacked trench metal-oxide-semiconductorfield effect transistor device according to claim 10, wherein said firstand second gates are each formed as substantially parallel elongatedstructure.
 12. The stacked trench metal-oxide-semiconductor field effecttransistor device according to claim 10, wherein: a first portion ofsaid first gate is formed as substantially parallel elongated structuresand a second portion of said first gate is formed as substantiallynormal-to-parallel elongated structures; and a first portion of saidsecond gate is formed as substantially parallel elongated structures anda second portion of the second gate is formed as substantiallynormal-to-parallel elongated structures.